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Proceedings Article

Mounting methodologies to measure EUV reticle nonflatness

[+] Author Affiliations
Venkata Siva Battula, Jacob R. Zeuske, Roxann L. Engelstad, Pradeep Vukkadala, Andrew R. Mikkelson

Univ. of Wisconsin, Madison (USA)

Chris K. Van Peski

Van Peski Consulting (USA)

Proc. SPIE 7470, 25th European Mask and Lithography Conference, 747014 (May 27, 2009); doi:10.1117/12.835202
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From Conference Volume 7470

  • 25th European Mask and Lithography Conference
  • Uwe F. W. Behringer
  • Dresden, Germany | January 12, 2009

abstract

Extreme Ultraviolet Lithography (EUVL) is one of the leading candidates for the next-generation lithography in the sub-30 nm regime. Stringent flatness requirements have been imposed for the front and back surfaces of EUVL masks to ensure successful pattern transfer that satisfies the image placement error budget. The EUVL Mask Standard (SEMI P-37) specifies the flatness of the two mask surfaces to be approximately 50 nm peak-to-valley. It is essential to measure the mask surface nonflatness accurately (without gravitational distortions) to the extent possible. The purpose of this research was to study the various mask mounting techniques and to compare these methods for repeatability and accuracy during the measurements.

© (2009) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Citation

Venkata Siva Battula ; Jacob R. Zeuske ; Roxann L. Engelstad ; Pradeep Vukkadala ; Andrew R. Mikkelson, et al.
"Mounting methodologies to measure EUV reticle nonflatness", Proc. SPIE 7470, 25th European Mask and Lithography Conference, 747014 (May 27, 2009); doi:10.1117/12.835202; http://dx.doi.org/10.1117/12.835202


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