Paper
27 May 2009 Mounting methodologies to measure EUV reticle nonflatness
Author Affiliations +
Proceedings Volume 7470, 25th European Mask and Lithography Conference; 747014 (2009) https://doi.org/10.1117/12.835202
Event: 25th European Mask and Lithography Conference, 2009, Dresden, Germany
Abstract
Extreme Ultraviolet Lithography (EUVL) is one of the leading candidates for the next-generation lithography in the sub-30 nm regime. Stringent flatness requirements have been imposed for the front and back surfaces of EUVL masks to ensure successful pattern transfer that satisfies the image placement error budget. The EUVL Mask Standard (SEMI P-37) specifies the flatness of the two mask surfaces to be approximately 50 nm peak-to-valley. It is essential to measure the mask surface nonflatness accurately (without gravitational distortions) to the extent possible. The purpose of this research was to study the various mask mounting techniques and to compare these methods for repeatability and accuracy during the measurements.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Venkata Siva Battula, Jacob R. Zeuske, Roxann L. Engelstad, Pradeep Vukkadala, Andrew R. Mikkelson, and Chris K. Van Peski "Mounting methodologies to measure EUV reticle nonflatness", Proc. SPIE 7470, 25th European Mask and Lithography Conference, 747014 (27 May 2009); https://doi.org/10.1117/12.835202
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KEYWORDS
Reticles

Extreme ultraviolet lithography

Photomasks

Computer aided design

Interferometry

Photography

Interferometers

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