Reactive sputtering of metal targets: influence of reactive atoms implantation

V. A. Marchenko

doi:10.1117/12.802360

29 April 2008 Reactive sputtering of metal targets: influence of reactive atoms implantation

V. A. Marchenko

Proceedings Volume 7025, Micro- and Nanoelectronics 2007; 70250D (2008) https://doi.org/10.1117/12.802360
Event: Micro- and Nanoelectronics 2007, 2007, Zvenigorod, Russian Federation

Abstract

Experimental realization of hysteresis free mode of vanadium reactive magnetron sputtering in Ar/O₂ mixtures has allowed, for the first time, a detailed measurement of discharge current- voltage characteristics (CVC). They appear to be not smooth but with a kink, which was not observed earlier. It is shown, that the existing model of reactive sputtering can describe only part of the observed CVC, the one above a certain ratio of a discharge current to oxygen partial pressure. The experimental data at smaller currents can be interpreted assuming the target oxidation to a depth not smaller than two monolayers, therefore sputtering does not result in the metal base exposure. The mechanisms of oxidation can be recoil implantation of surface oxygen atoms and probably radiation-enhanced thermal diffusion.

Citation Download Citation

V. A. Marchenko "Reactive sputtering of metal targets: influence of reactive atoms implantation", Proc. SPIE 7025, Micro- and Nanoelectronics 2007, 70250D (29 April 2008); https://doi.org/10.1117/12.802360

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