The impending need of double patterning/double exposure techniques is accelerating the demand for higher pattern
placement accuracy to be achieved in the upcoming lithography generations. One of the biggest error sources of pattern
placement accuracy on an EB mask writer is the resist charging effect. In this paper, we provide a model to describe the resist
charging behavior on a photomask written on our EBM-6000 system. We found this model was very effective in correcting
and reducing the beam position error induced by the charging effect.© (2008) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.