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Proceedings Article

Modeling of charging effect and its correction by EB mask writer EBM-6000

[+] Author Affiliations
Noriaki Nakayamada, Seiji Wake, Takashi Kamikubo, Hitoshi Sunaoshi, Shuichi Tamamushi

NuFlare Technology, Inc. (Japan)

Proc. SPIE 7028, Photomask and Next-Generation Lithography Mask Technology XV, 70280C (May 14, 2008); doi:10.1117/12.793020
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From Conference Volume 7028

  • Photomask and Next-Generation Lithography Mask Technology XV
  • Toshiyuki Horiuchi
  • Yokohama, Japan | April 16, 2008

abstract

The impending need of double patterning/double exposure techniques is accelerating the demand for higher pattern placement accuracy to be achieved in the upcoming lithography generations. One of the biggest error sources of pattern placement accuracy on an EB mask writer is the resist charging effect. In this paper, we provide a model to describe the resist charging behavior on a photomask written on our EBM-6000 system. We found this model was very effective in correcting and reducing the beam position error induced by the charging effect.

© (2008) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Citation

Noriaki Nakayamada ; Seiji Wake ; Takashi Kamikubo ; Hitoshi Sunaoshi and Shuichi Tamamushi
"Modeling of charging effect and its correction by EB mask writer EBM-6000", Proc. SPIE 7028, Photomask and Next-Generation Lithography Mask Technology XV, 70280C (May 14, 2008); doi:10.1117/12.793020; http://dx.doi.org/10.1117/12.793020


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