Stochastic continuum modeling self-assembled epitaxial quantum dot formation

Lawrence H. Friedman

doi:10.1117/12.795615

10 September 2008 Stochastic continuum modeling self-assembled epitaxial quantum dot formation

Lawrence H. Friedman

Proceedings Volume 7041, Nanostructured Thin Films; 704103 (2008) https://doi.org/10.1117/12.795615
Event: NanoScience + Engineering, 2008, San Diego, California, United States

Abstract

Semiconductor epitaxial self-assembled quantum dots (SAQDs) have potential for electronic and optoelectronic applications such as high density logic, quantum computing architectures, laser diodes, and other optoelectronic devices. SAQDs form during heteroepitaxy of lattice-mismatched films where surface diffusion is driven by an interplay of strain energy and surface energy. Common systems are Ge_xSi_1-x/Si and In_xGa_1-xAs/GaAs. SAQDs are typically grown on a (001) crystal surface. Self-assembled nanostructures form due to both random and deterministic effects. As a consequence, order and controllability of SAQD formation is a technological challenge. Theoretical and numerical models of SAQD formation can contribute both fundamental understanding and become quantitative design tools for improved SAQD fabrication if they can accurately capture the competition between deterministic and random effects. In this research, a stochastic model of SAQD formation is presented. This model adapts previous surface diffusion models to include thermal fluctuations in surface diffusion, randomness in material deposition and the effects of anisotropic elasticity, anisotropic surface energy and anisotropic diffusion, all of which are needed to model average SAQD morphology and order. This model is applied to Ge/Si SAQDs which are group IV semiconductor dots and InAs/GaAs SAQDs which are III-V semiconductor dots.

Citation Download Citation

Lawrence H. Friedman "Stochastic continuum modeling self-assembled epitaxial quantum dot formation", Proc. SPIE 7041, Nanostructured Thin Films, 704103 (10 September 2008); https://doi.org/10.1117/12.795615

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