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Proceedings Article

Coatings for next generation lithography

[+] Author Affiliations
C. Zaczek, S. Müllender, H. Enkisch

Carl Zeiss SMT AG (Germany)

F. Bijkerk

FOM Institute for Plasma Physics (Netherlands)

Proc. SPIE 7101, Advances in Optical Thin Films III, 71010X (September 25, 2008); doi:10.1117/12.796944
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From Conference Volume 7101

  • Advances in Optical Thin Films III
  • Norbert Kaiser; Michel Lequime; H. Angus Macleod
  • Glasgow, Scotland, United Kingdom | September 01, 2008

abstract

The latest generation of 193nm immersion lithography optics, with a numerical aperture (NA) of 1.35 and ultra pure water as immersion fluid serves the 45nm node on the ITRS roadmap. The potential solutions for the next step, the 32nm node, as presented in December 2007 by the ITRS are: 193nm double patterning / exposure, 193nm with 2nd generation fluid and EUVL. The performance of such next generation lithography optics is increasingly driven by the coating performance. For 193nm the performance of the antireflection and high reflection coatings is driven by the increasing NA, which requires the control of polarisation effects and transmission uniformity over light incidence angles. For EUV only high reflection coatings are needed and the NA is comparatively small. But the performance is limited by higher absorption and lower refractive index contrasts of the applicable coating materials at 13.5nm with respect to 193nm. In this talk we discuss and compare the different requirements and challenges in coating material, design, process, lifetime and accuracy for next generation lithography optics.

© (2008) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Citation

C. Zaczek ; S. Müllender ; H. Enkisch and F. Bijkerk
"Coatings for next generation lithography", Proc. SPIE 7101, Advances in Optical Thin Films III, 71010X (September 25, 2008); doi:10.1117/12.796944; http://dx.doi.org/10.1117/12.796944


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