Large-scale fabrication of micro-optical Guided-Mode-Resonance (GMR) components using VLSI techniques is desirable, due to the planar system integration capabilities it enables, especially with laser resonator technology. However, GMR performance is dependent on within-wafer as well as wafer-to-wafer lithographic process variability, and pattern transfer fidelity of the final component in the substrate. The fabrication of lithographs below the g-line stepper resolution limit is addressed using multiple patterning. We report results from computational simulations, fabrication and optical reflectance measurements of GMR mirrors and filters (designed to perform around the wavelength of 1550nm), with correlations to lithographic parameter variability, such as photoresist exposure range and etch depth. The dependence of the GMR resonance peak wavelength, peak bandwidth are analyzed as a function of photolithographic fabrication tolerances and process window.© (2009) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.