Paper
28 February 2009 Hybrid green LEDs based on n-ZnO/(InGaN/GaN) multi-quantum-wells/p-GaN
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Abstract
Hybrid green light-emitting diodes (LEDs) comprised of n-ZnO/(InGaN/GaN) multi-quantum-wells/p-GaN were grown on semi-insulating AlN/sapphire using pulsed laser deposition for the n-ZnO and metal organic chemical vapor deposition for the other layers. X-ray diffraction revealed that high crystallographic quality was preserved after the n- ZnO growth. LEDs showed a turn-on voltage of 2.5 V and a room temperature electroluminescence (EL) centered at 510 nm. A blueshift and narrowing of the EL peak with increasing current was attributed to bandgap renormalization. The results indicate that hybrid LED structures could hold the prospect for the development of green LEDs with superior performance.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
C. Bayram, F. Hosseini Teherani, David J. Rogers, and Manijeh Razeghi "Hybrid green LEDs based on n-ZnO/(InGaN/GaN) multi-quantum-wells/p-GaN", Proc. SPIE 7217, Zinc Oxide Materials and Devices IV, 72170P (28 February 2009); https://doi.org/10.1117/12.817033
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Cited by 4 scholarly publications and 1 patent.
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KEYWORDS
Light emitting diodes

Zinc oxide

Green light emitting diodes

Indium gallium nitride

Electroluminescence

Gallium nitride

Metalorganic chemical vapor deposition

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