The effect between absorber profile and wafer print process window in ArF 6% Att. PSM mask

Joseph Tzeng; Booky Lee; Jerry Lu; Makoto Kozuma; Noah Chen; Wen Kuang Lin; Army Chung; Yow Choung Houng; Chi Hung Wei

doi:10.1117/12.729025

15 May 2007 The effect between absorber profile and wafer print process window in ArF 6% Att. PSM mask

Joseph Tzeng, Booky Lee, Jerry Lu, Makoto Kozuma, Noah Chen, Wen Kuang Lin, Army Chung, Yow Choung Houng, Chi Hung Wei

Proceedings Volume 6607, Photomask and Next-Generation Lithography Mask Technology XIV; 660736 (2007) https://doi.org/10.1117/12.729025
Event: Photomask and Next-Generation Lithography Mask Technology XIV, 2007, Yokohama, Japan

Abstract

As the leading edge semiconductor technology development, the gate critical dimension (CD) shrinks below 90nm. The microlithography capability is limited by the exposure utility. The development of scanner is focusing on low k that is implying that the high NA scanner is the main stream in the future. In addition, the high NA reticle requirement is stricter than previous one. In aspect of mask manufacturing, reducing mask topography effect is one of the various solutions, which is like lower mask blank flatness, should be lower than 1T flatness type or else. Unless the mask flatness, the absorber profile also could be a considerate effect element, which is local topography effect contribution in wafer print window. The main purpose of this study is verifying how much wafer prints window discrepancy between different absorber profiles. The experiment pattern is designed for five kind of MoSi sidewall angle (SWA) on the same mask, which could simultaneously gathers the wafer print window data. In addition, the other purpose is getting exactly the same process condition of five kinds MoSi profile in both mask house and lithography of wafer manufacturing Fab. The mask layout pattern is poly layer of logical 90 nm generation that is more critical among all of lithography and was exposed by 193nm ArF.Then, we offer the effected level between absorber profile and lithography process window. The process window of different SWA pattern will be compare to check the relationship between process windows and mask profile. We also investigate how the profile affects the optical proximity behavior.

Citation Download Citation

Joseph Tzeng, Booky Lee, Jerry Lu, Makoto Kozuma, Noah Chen, Wen Kuang Lin, Army Chung, Yow Choung Houng, and Chi Hung Wei "The effect between absorber profile and wafer print process window in ArF 6% Att. PSM mask", Proc. SPIE 6607, Photomask and Next-Generation Lithography Mask Technology XIV, 660736 (15 May 2007); https://doi.org/10.1117/12.729025

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
6 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Photomasks

Semiconducting wafers

Lithography

193nm lithography

Critical dimension metrology

Scanners

Wafer-level optics

Show All Keywords

Keywords/Phrases

Search In:

Publication Years