Paper
18 February 2009 A CdSe quantum dot in a ZnSe nanowire as an efficient high-temperature single-photon source
Thomas Aichele, Adrien Tribu, Gregory Sallen, Catherine Bougerol, Régis André, Juanita Bocquel, Edith Bellet-Almeric, Fabrice Donatini, Le Si Dang, Jean-Philippe Poizat, Kuntheak Kheng, Serge Tatarenko
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Abstract
We present a high-temperature single-photon source based on a CdSe quantum dot in a ZnSe nanowire. The nanowires have been grown by Molecular Beam Epitaxy in the Vapour-Liquid-Solid growth mode. We utilized a two-step growth process, where a thin, defect free ZnSe nanowire on a top of a nanoneedle is grown. Quantum dots are formed by incorporating a narrow zone of CdSe into the nanowire. We observe an intense and highly polarized photoluminescence. Efficient photon anti-bunching was observed up to 220 K, while conserving a normalized anti-bunching dip of at most 36%.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Thomas Aichele, Adrien Tribu, Gregory Sallen, Catherine Bougerol, Régis André, Juanita Bocquel, Edith Bellet-Almeric, Fabrice Donatini, Le Si Dang, Jean-Philippe Poizat, Kuntheak Kheng, and Serge Tatarenko "A CdSe quantum dot in a ZnSe nanowire as an efficient high-temperature single-photon source", Proc. SPIE 7224, Quantum Dots, Particles, and Nanoclusters VI, 72240U (18 February 2009); https://doi.org/10.1117/12.809244
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KEYWORDS
Nanowires

Gold

Quantum dots

Scanning electron microscopy

Dielectric polarization

Excitons

Luminescence

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