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Proceedings Article

Ultraviolet laser diodes on sapphire and AlN substrates

[+] Author Affiliations
Michael Kneissl, Zhihong Yang, Mark Teepe, Noble M. Johnson

Palo Alto Research Center, Inc. (USA)

Proc. SPIE 7230, Novel In-Plane Semiconductor Lasers VIII, 72300E (February 03, 2009); doi:10.1117/12.810926
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From Conference Volume 7230

  • Novel In-Plane Semiconductor Lasers VIII
  • Alexey A. Belyanin; Peter M. Smowton
  • San Jose, CA | January 24, 2009

abstract

The performance characteristics of InAlGaN multiple quantum well (MQW) lasers grown on sapphire and low defect density bulk AlN substrates has been compared. The group III-nitride laser heterostructures were grown on (0001) AlN and c-plane sapphire substrates by metalorganic vapor phase epitaxy (MOVPE). Lasing was observed for optically pumped AlGaInN heterostructures in the wavelength range between 333 nm and 310 nm. A comparison of laser thresholds shows reduced threshold power densities for lasers grown on bulk AlN with threshold densities as low as 175 kW/cm2 for lasers emitting near 330 nm.

© (2009) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Citation

Michael Kneissl ; Zhihong Yang ; Mark Teepe and Noble M. Johnson
"Ultraviolet laser diodes on sapphire and AlN substrates", Proc. SPIE 7230, Novel In-Plane Semiconductor Lasers VIII, 72300E (February 03, 2009); doi:10.1117/12.810926; http://dx.doi.org/10.1117/12.810926


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