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6 February 2008 Optimizing the efficiency in diode-pumped Yb3+:YAG disk amplifiers for high-energy nanoseconds pulses
Dingxiang Cao, Haiwu Yu, Wanguo Zheng, Shaobo He
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Proceedings Volume 6823, High-Power Lasers and Applications IV; 682309 (2008) https://doi.org/10.1117/12.757219
Event: Photonics Asia 2007, 2007, Beijing, China
Abstract
The geometry of ytterbium-doped active media in diode-pumped lasers can be calculated with the help of numerical modeling for the optimization of high-energy and repetitively pulse amplifiers. In the first step the optimum thickness of the longitudinally pumped gain medium of Yb:YAG is obtained with a theory of quasi-three level laser ions. For the parameters of the amplifier which will deliver a 100 J, 10 Hz, 10 ns pulse, the optimum thicknesses is 5.5mm with a doping concentration of 3.92*1020 cm-3 taking the amplified spontaneous emission (ASE) into account. In the second step, we analyze the laser performance of the amplifiers by using various cooling configurations. The cooling configurations investigated here include those both by forced convection cooling in a narrow passage. In every case we determine the temperature rise, the longitudinal and radial temperature gradient, and the resulting energy storage and extraction efficiency. The simulation results show that, with a pumping intensity of 20 kW/cm2 at 10 Hz and a doping concentration of 3.92*1020 cm-3 at a thickness of 5.5 mm thick piece Yb:YAG, for a laser injection fluence of 0.2 J/cm2 (10 ns) ,the output laser fluence and optical-to-optical efficiency are expected to be 7.2 J/cm2 and 35%, respectively, at a heat exchange coefficient of 1 W/cm2/K of water and 250 W/m2/K of gas.
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Dingxiang Cao, Haiwu Yu, Wanguo Zheng, and Shaobo He "Optimizing the efficiency in diode-pumped Yb3+:YAG disk amplifiers for high-energy nanoseconds pulses", Proc. SPIE 6823, High-Power Lasers and Applications IV, 682309 (6 February 2008); https://doi.org/10.1117/12.757219
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KEYWORDS
Doping
Optical amplifiers
Ytterbium
Absorption
Ions
Laser optics
Semiconductor lasers
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