High-efficiency AlGaAs/GaAs quantum well semiconductor laser

Lin Li; Chunming Wan; Zhanguo Li; Mei Li; Guojun Liu

doi:10.1117/12.757104

7 January 2008 High-efficiency AlGaAs/GaAs quantum well semiconductor laser

Lin Li, Chunming Wan, Zhanguo Li, Mei Li, Guojun Liu

Proceedings Volume 6824, Semiconductor Lasers and Applications III; 68241G (2008) https://doi.org/10.1117/12.757104
Event: Photonics Asia 2007, 2007, Beijing, China

Abstract

The AlGaAs/GaAs double quantum well semiconductor lasers grown by molecular beam epitaxy show high external quantum efficiency and high power conversion efficiency at continuous-wave power output using an asymmetric structure. The threshold current density and slope efficiency of the device are 200A/cm² and 1.25W/A, respectively. The high external quantum efficiency and maximum conversion efficiency are 81% and 66%, respectively.

Citation Download Citation

Lin Li, Chunming Wan, Zhanguo Li, Mei Li, and Guojun Liu "High-efficiency AlGaAs/GaAs quantum well semiconductor laser", Proc. SPIE 6824, Semiconductor Lasers and Applications III, 68241G (7 January 2008); https://doi.org/10.1117/12.757104

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