Paper
11 September 2007 Detailed balance: lifetimes and efficiencies
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Abstract
Lifetimes of minority carriers in semiconductors are very important parameters for devices, especially for solar cells. For germanium and silicon, it was discovered that the actually measured lifetimes were by orders of magnitude smaller than the theoretical limit, which can be deduced from the principle of detailed balance of black-body radiative absorption and emission. The thermodynamic limit of solar cell efficiency was also derived based on this principle. The development of solar cells with silicon and its non-ideal junction behavior are reviewed. The contemporary suggested trends to overcome this detailed balance limit are being discussed.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hans J. Queisser "Detailed balance: lifetimes and efficiencies", Proc. SPIE 6651, Photovoltaic Cell and Module Technologies, 665102 (11 September 2007); https://doi.org/10.1117/12.731594
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KEYWORDS
Solar cells

Silicon

Semiconductors

Germanium

Solar energy

Photons

Transistors

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