Vertical GaN based light emitting diodes on metal alloy substrate boosts high power LED performance

T. Doan; C. Tran; C. Chu; C. Chen; W. H. Liu; J. Chu; K. Yen; H. Chen; F. Fan

doi:10.1117/12.732903

14 September 2007 Vertical GaN based light emitting diodes on metal alloy substrate boosts high power LED performance

T. Doan, C. Tran, C. Chu, C. Chen, W. H. Liu, J. Chu, K. Yen, H. Chen, F. Fan

Proceedings Volume 6669, Seventh International Conference on Solid State Lighting; 666903 (2007) https://doi.org/10.1117/12.732903
Event: Optical Engineering + Applications, 2007, San Diego, California, United States

Abstract

Vertical GaN based Light Emitting Diodes on metal alloy substrate (VLEDMS) were realized and characterized for solid state lighting application. An efficiency of more than 100 lumens/watt from a white LED was achieved. And, an efficiency of more than 80 lumens/watt from a high efficiency and high power green LED was achieved also. The dissipate heat more effectively than conventional and flip-chip LEDs, thanks to the higher thermal conductivity of a copper alloy substrate. This increases their maximum operating current and output power and makes them more suitable for solid-state lighting applications. In addition, these VLEDMS exhibit many advantages over those on sapphire under extreme operation conditions for general lighting application.

Citation Download Citation

T. Doan, C. Tran, C. Chu, C. Chen, W. H. Liu, J. Chu, K. Yen, H. Chen, and F. Fan "Vertical GaN based light emitting diodes on metal alloy substrate boosts high power LED performance", Proc. SPIE 6669, Seventh International Conference on Solid State Lighting, 666903 (14 September 2007); https://doi.org/10.1117/12.732903

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