Paper
18 March 2009 EUV resist outgassing: scaling to HVM intensity
Author Affiliations +
Abstract
Typical extreme ultraviolet (EUV) photoresist is known to outgas carbon-containing molecules, which is of particular concern to the industry as these molecules tend to contaminate optics and diminish reflectivity. This prompted extensive work to measure these species and the quantities that they outgas in a vacuum environment. Experiments were performed to test whether the outgassing rate of these carbon-containing molecules is directly proportional to the rate at which the EUV photons arrive and whether a very high power exposure will cause the same amount of outgassing as a much lower power exposure with the dose unchanged.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Alin O. Antohe, Chimaobi Mbanaso, Yu-Jen Fan, Leonid Yankulin, Rashi Garg, Petros Thomas, Gregory Denbeaux, Emil C. Piscani, and Andrea F. Wuest "EUV resist outgassing: scaling to HVM intensity", Proc. SPIE 7271, Alternative Lithographic Technologies, 727126 (18 March 2009); https://doi.org/10.1117/12.816555
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CITATIONS
Cited by 6 scholarly publications.
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KEYWORDS
Extreme ultraviolet

Extreme ultraviolet lithography

Molecules

Photoresist materials

Polymethylmethacrylate

Spectroscopy

Semiconducting wafers

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