Paper
23 March 2009 Investigation of factors causing difference between simulation and real SEM image
Author Affiliations +
Abstract
As the candidates of factors to consider for accurate Monte Carlo simulation of SEM images, (1) the difference of cross-section between an approximate shape for simple simulation and a real pattern shape, (2) the influence of native oxide growing on a pattern surface, and (3) the potential distribution above the target surface are proposed. Each influence on SEM signal is studied by means of experiments and simulations for a Si trench pattern as a motif. Among these factors, native oxide of about 1nm in thickness has a significant influence that increases SEM signals at the top edge and the slope. We have assumed and discussed models for the native oxide effect.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. Kadowaki, A. Hamaguchi, H. Abe, Y. Yamazaki, S. Borisov, A. Ivanchikov, and S. Babin "Investigation of factors causing difference between simulation and real SEM image", Proc. SPIE 7272, Metrology, Inspection, and Process Control for Microlithography XXIII, 72723I (23 March 2009); https://doi.org/10.1117/12.814036
Lens.org Logo
CITATIONS
Cited by 10 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Oxides

Scanning electron microscopy

Monte Carlo methods

Silicon

Silica

Wet etching

Inspection

RELATED CONTENT


Back to Top