Line edge roughness transfer during plasma etching: modeling approaches and comparison with experimental results

Vassilios Constantoudis; George Kokkoris; Panayiota Xydi; Evangelos Gogolides; Erwine Pargon; Mickael Martin

doi:10.1117/12.823608

1 April 2009 Line edge roughness transfer during plasma etching: modeling approaches and comparison with experimental results

Vassilios Constantoudis, George Kokkoris, Panayiota Xydi, Evangelos Gogolides, Erwine Pargon, Mickael Martin

Author Affiliations +

Proceedings Volume 7273, Advances in Resist Materials and Processing Technology XXVI; 72732J (2009) https://doi.org/10.1117/12.823608
Event: SPIE Advanced Lithography, 2009, San Jose, California, United States

Abstract

In this paper, both modeling and experimental results for the effects of plasma etching on photoresist Line Edge and Width Roughness (LER/LWR) and their transfer to underlayer films are presented and compared. In particular, we investigate the roughness formation on both photoresist and underlayer sidewalls during a) isotropic trimming of photoresist, b) anisotropic plasma etching and LER transfer to substrate, and c) photoresist trimming followed by anisotropic plasma etching of the substrate. The trimming process is modeled with an (2D or 3D) isotropic movement of the resist sidewall. In the anisotropic plasma etching process, the resist sidewall is used as a mask to anisotropically transfer the pattern to the underlying film. Experiments include trimming of 193nm photoresist in O2 plasma with no bias voltage and anisotropic etching of BARC and Si underlayers in CF4 and HBr/Cl2/O2 with bias. Both model and experimental results show that resist trimming causes reduction of resist LWR and increase of the correlation length and roughness exponent with trimming time. This means that surface features vs trimming time become lower, wider and with less high frequency fluctuations. In the case of anisotropic etching, model predicts noticeable reduction of LWR whereas, correlation length and roughness exponent remain almost unaffected. The first experimental results seem to confirm these predictions. As regards the resist trimming followed by anisotropic etching, modeling results predict that the intervention of an isotropic trimming process before pattern transfer does not lead to larger LWR reduction.

Citation Download Citation

Vassilios Constantoudis, George Kokkoris, Panayiota Xydi, Evangelos Gogolides, Erwine Pargon, and Mickael Martin "Line edge roughness transfer during plasma etching: modeling approaches and comparison with experimental results", Proc. SPIE 7273, Advances in Resist Materials and Processing Technology XXVI, 72732J (1 April 2009); https://doi.org/10.1117/12.823608

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available