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Proceedings Article

Experimental result and simulation analysis for the use of pixelated illumination from source mask optimization for 22nm logic lithography process

[+] Author Affiliations
Kafai Lai, Saeed Bagheri, Kehan Tian, Jaione Tirapu-Azpiroz, Scott Halle, Greg McIntyre, Daniel Corliss

IBM Microelectronics (USA)

Alan E. Rosenbluth, David Melville, Alfred Wagner, Martin Burkhardt

IBM Yorktown Research Ctr. (USA)

John Hoffnagle, Young Kim, Geoffrey Burr

IBM Almaden Research Ctr. (USA)

Moutaz Fakhry

Mentor Graphics Corp. (USA)

Emily Gallagher, Tom Faure, Michael Hibbs

IBM Mask House (USA)

Donis Flagello

ASML US, Inc. (USA)

Joerg Zimmermann, Bernhard Kneer, Frank Rohmund, Frank Hartung, Christoph Hennerkes, Manfred Maul

Carl Zeiss SMT AG (Germany)

Robert Kazinczi, Andre Engelen, Rene Carpaij, Remco Groenendijk, Joost Hageman

ASML (Netherlands)

Carsten Russ

Formerly Carl Zeiss SMT AG (Germany)

Proc. SPIE 7274, Optical Microlithography XXII, 72740A (March 16, 2009); doi:10.1117/12.814680
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From Conference Volume 7274

  • Optical Microlithography XXII
  • Harry J. Levinson; Mircea V. Dusa
  • San Jose, California, USA | February 22, 2009

abstract

We demonstrate experimentally for the first time the feasibility of applying SMO technology using pixelated illumination. Wafer images of SRAM contact holes were obtained to confirm the feasibility of using SMO for 22nm node lithography. There are still challenges in other areas of SMO integration such as mask build, mask inspection and repair, process modeling, full chip design issues and pixelated illumination, which is the emphasis in this paper. In this first attempt we successfully designed a manufacturable pixelated source and had it fabricated and installed in an exposure tool. The printing result is satisfactory, although there are still some deviations of the wafer image from simulation prediction. Further experiment and modeling of the impact of errors in source design and manufacturing will proceed in more detail. We believe that by tightening all kind of specification and optimizing all procedures will make pixelated illumination a viable technology for 22nm or beyond. Publisher's Note: The author listing for this paper has been updated to include Carsten Russ. The PDF has been updated to reflect this change.

© (2009) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Citation

Kafai Lai ; Alan E. Rosenbluth ; Saeed Bagheri ; John Hoffnagle ; Kehan Tian, et al.
"Experimental result and simulation analysis for the use of pixelated illumination from source mask optimization for 22nm logic lithography process", Proc. SPIE 7274, Optical Microlithography XXII, 72740A (March 16, 2009); doi:10.1117/12.814680; http://dx.doi.org/10.1117/12.814680


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