Terahertz wave generation and detection analysis of nanowire gated field effect transistor

Yu Chen; Jin He; Xuehao Mou; Yinglei Wang; Lining Zhang; Yan Song; Mansun Chan

doi:10.1117/12.820510

16 February 2009 Terahertz wave generation and detection analysis of nanowire gated field effect transistor

Yu Chen, Jin He, Xuehao Mou, Yinglei Wang, Lining Zhang, Yan Song, Mansun Chan

Proceedings Volume 7277, Photonics and Optoelectronics Meetings (POEM) 2008: Terahertz Science and Technology; 72770B (2009) https://doi.org/10.1117/12.820510
Event: Photonics and Optoelectronics Meetings, 2008, Wuhan, China

Abstract

A complete analysis of terahertz(THZ) wave generation and detection of silicon nanowire gated field effect transistor (SNFET) is presented in this paper. Based on the developed SNFET THZ device theory, the dependence of THZ detection of SNFET on bias and structure parameters are obtained and illustrated. The THZ generation condition and various unique characteristics are also demonstrated and analyzed in details. The numerical skills utilized in this paper are also described. Based on the developed numerical tool, the evolution processes of plasma wave in generation and detection mode are also presented.

Citation Download Citation

Yu Chen, Jin He, Xuehao Mou, Yinglei Wang, Lining Zhang, Yan Song, and Mansun Chan "Terahertz wave generation and detection analysis of nanowire gated field effect transistor", Proc. SPIE 7277, Photonics and Optoelectronics Meetings (POEM) 2008: Terahertz Science and Technology, 72770B (16 February 2009); https://doi.org/10.1117/12.820510

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