Paper
19 February 2009 Epitaxial growth a-plane ZnO films on a-GaN/r-Al2O3 templates
Cheng Liu, Jiangnan Dai, Zhihao Wu, Xiangyun Han, Qinghua He, Chenhui Yu, Lei Zhang, Yihua Gao, Changqing Chen
Author Affiliations +
Abstract
In this work, we have grown a-plane ZnO films on a-plane GaN/r-sapphire templates by pulsed laser deposition. The aplane GaN of the templates is aimed to mitigate the large lattice mismatch between ZnO and sapphire, and was grown by metal organic chemical vapor deposition. The grown a-plane ZnO films have been analyzed by various techniques such as high resolution X-ray diffraction, photoluminescence. It shows that high quality a-plane ZnO films have been achieved by our growth method.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Cheng Liu, Jiangnan Dai, Zhihao Wu, Xiangyun Han, Qinghua He, Chenhui Yu, Lei Zhang, Yihua Gao, and Changqing Chen "Epitaxial growth a-plane ZnO films on a-GaN/r-Al2O3 templates", Proc. SPIE 7279, Photonics and Optoelectronics Meetings (POEM) 2008: Optoelectronic Devices and Integration, 72791L (19 February 2009); https://doi.org/10.1117/12.823281
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KEYWORDS
Zinc oxide

Gallium nitride

Sapphire

Crystals

X-ray diffraction

Luminescence

Metalorganic chemical vapor deposition

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