Comparative studies of sol-gel SiO2 thin films prepared by spin-coating and dip-coating techniques

Xiliang He; Jiehua Wu; Xiangdong Gao; Lingnan Wu; Xiaomin Li

doi:10.1117/12.782962

14 November 2007 Comparative studies of sol-gel SiO₂ thin films prepared by spin-coating and dip-coating techniques

Xiliang He, Jiehua Wu, Xiangdong Gao, Lingnan Wu, Xiaomin Li

Proceedings Volume 6722, 3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies; 672217 (2007) https://doi.org/10.1117/12.782962
Event: 3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Large Mirrors and Telescopes, 2007, Chengdu, China

Abstract

Silicon dioxide (SiO₂) film is an important material for semiconductor industry as the gate dielectric material, and optical industry as antireflective coatings, and so on. The sol-gel method has been widely used for the deposition of oxide thin films due to several advantages such as simple and low-cost equipment, normal atmospheric conditions, and ease control of the precursor composition doping. In this work, SiO₂ thin film was deposited on BK7 glass substrate by spin-coating and dip-coating techniques, respectively. Three precursor concentrations were investigated, i.e., tetraethylorthosilicate (TEOS): ethanol: water= 1:7:7, 1:10:10 and 1:15:15 (molar ratio). X-Ray Diffraction spectrometry (XRD), scanning electron microscopy (SEM), and UV-VIS-NIR scanning spectrophotometry were used to characterize the crystallinity, morphological and optical properties of deposited SiO₂ thin films. Results show that all the SiO₂ thin films deposited by the spin-coating and dip-coating are amorphous. SEM analysis confirms that the deposited SiO₂ thin films have high surface quality and tight adherence with the substrate. The transmittance measurements indicate that dip-coated SiO₂ thin film from gel of low precursor concentration represents better transmittance than that from high concentrations at the range of 600-1200nm. SiO₂ thin film spin-coated from gel of high precursor concentration has better transmittance than that by dip-coating, but of opposite results for the films deposited from gels of low precursor concentrations.

Citation Download Citation

Xiliang He, Jiehua Wu, Xiangdong Gao, Lingnan Wu, and Xiaomin Li "Comparative studies of sol-gel SiO₂ thin films prepared by spin-coating and dip-coating techniques", Proc. SPIE 6722, 3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies, 672217 (14 November 2007); https://doi.org/10.1117/12.782962

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