Paper
15 February 2008 Femtosecond laser for black silicon and photovoltaic cells
T. Sarnet, M. Halbwax, R. Torres, P. Delaporte, M. Sentis, S. Martinuzzi, V. Vervisch, F. Torregrosa, H. Etienne, L. Roux, S. Bastide
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Abstract
We have prepared absorbing structures for photovoltaic cells with different nano-texturization, obtained by means of a femtosecond laser, without the use of corrosive gas (i.e. under vacuum). To take in account the 3D structured front surface, the emitter doping has been realized by using Plasma Immersion Ion Implantation (so-called PULSION). The results show a photocurrent increase up to 60 % in the laser texturized zones.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
T. Sarnet, M. Halbwax, R. Torres, P. Delaporte, M. Sentis, S. Martinuzzi, V. Vervisch, F. Torregrosa, H. Etienne, L. Roux, and S. Bastide "Femtosecond laser for black silicon and photovoltaic cells", Proc. SPIE 6881, Commercial and Biomedical Applications of Ultrafast Lasers VIII, 688119 (15 February 2008); https://doi.org/10.1117/12.768516
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Cited by 36 scholarly publications.
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KEYWORDS
Silicon

Absorption

Semiconductor lasers

Femtosecond phenomena

Scanning electron microscopy

Doping

Optical simulations

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