Nanopatterning and selective area epitaxy of GaN on Si substrate

L. S. Wang; S. J. Chua; S. Tripathy; K. Y. Zang; B. Z. Wang; J. H. Teng

doi:10.1117/12.762149

15 February 2008 Nanopatterning and selective area epitaxy of GaN on Si substrate

L. S. Wang, S. J. Chua, S. Tripathy, K. Y. Zang, B. Z. Wang, J. H. Teng

Proceedings Volume 6894, Gallium Nitride Materials and Devices III; 68940A (2008) https://doi.org/10.1117/12.762149
Event: Integrated Optoelectronic Devices 2008, 2008, San Jose, California, United States

Abstract

Due to lack of suitable lattice matched substrates, III-Nitride materials are usually grown on sapphire, SiC, and silicon. The heteroepitaxy of GaN on these substrates often incorporates a high density of dislocation and point defects due to lattice and thermal mismatch. It is desirable to reduce the defect density in III-Nitrides in order to fabricate longer lifetime and high brightness light emitting diodes, lasers, and high-electron mobility transistors. In this context, nano-scale epitaxy on patterned Si substrates allows lateral growth, which eventually leads to a reduction of defect density and strain in the overgrown GaN films. Large area nano-patterning with dielectric masks would also be useful to fabricate highly-ordered and dense nitride nanostructures by selective area homo- and hetero-epitaxy.

Citation Download Citation

L. S. Wang, S. J. Chua, S. Tripathy, K. Y. Zang, B. Z. Wang, and J. H. Teng "Nanopatterning and selective area epitaxy of GaN on Si substrate", Proc. SPIE 6894, Gallium Nitride Materials and Devices III, 68940A (15 February 2008); https://doi.org/10.1117/12.762149

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