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Proceedings Article

Band coupling model of electron and hole mediated ferromagnetism in semiconductors: the case of GaN

[+] Author Affiliations
Su-Huai Wei

National Renewable Energy Lab.

Gustavo M. Dalpian

National Renewable Energy Lab. and Univ. Federal do ABC (Brazil)

Proc. SPIE 6894, Gallium Nitride Materials and Devices III, 68940L (February 15, 2008); doi:10.1117/12.763494
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From Conference Volume 6894

  • Gallium Nitride Materials and Devices III
  • Hadis Morkoç; Cole W. Litton; Jen-Inn Chyi; Yasushi Nanishi; Euijoon Yoon
  • San Jose, CA | January 19, 2008

abstract

Transition metal (TM) doped diluted magnetic semiconductors (DMSs) have many unique physical properties that can be used for magneto-optical and spintronic applications. The DMSs exhibit a wide range of magnetic ordering behavior. For example, Mn doped GaN can be either ferromagnetic or antiferromagnetic, depending on the Mn concentration, carrier density, or pressure. A unified band coupling model based on the p -d and d -d level repulsions between the TM and host elements are developed to explain the hole-induced ferromagnetism. We show that kinetic s -d coupling can be introduced through chemical ordering and strain, thus leading to electron-mediated ferromagnetism. Moreover, by using rare-earth elements (e.g., Gd) as magnetic dopants, the symmetry-allowed s-f coupling can also lead to a large splitting at the conduction band edge, producing electron-mediated ferromagnetism. Our model, therefore, provides a simple guideline for future band structure engineering of magnetic semiconductors.

© (2008) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Citation

Su-Huai Wei and Gustavo M. Dalpian
"Band coupling model of electron and hole mediated ferromagnetism in semiconductors: the case of GaN", Proc. SPIE 6894, Gallium Nitride Materials and Devices III, 68940L (February 15, 2008); doi:10.1117/12.763494; http://dx.doi.org/10.1117/12.763494


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