EUV mask readiness and challenges for the 22nm half pitch and beyond

Y. David Chan

doi:10.1117/12.896913

1 April 2011 EUV mask readiness and challenges for the 22nm half pitch and beyond

Y. David Chan

Proceedings Volume 7985, 27th European Mask and Lithography Conference; 79850A (2011) https://doi.org/10.1117/12.896913
Event: 27th European Mask and Lithography Conference, 2011, Dresden, Germany

Abstract

Defect-free reticle availability has consistently been among the top two challenges in implementing EUV high volume manufacturing (HVM) in 2013. This paper will provide an updated industry survey of EUV mask readiness and challenges for the 22 nm half-pitch and beyond. Device makers, exposure and inspection equipment suppliers, mask makers, and blank suppliers submitted responses to the survey. Focus areas were EUV mask readiness for pilot line DRAM in 2011, DRAM HVM in 2013, and logic pilot line in 2013. The paper will also provide updates on various key technology areas including defect reduction activities in multilayer deposition; challenges and progress in blank and mask cleans, mask handling, and storage; and key inspection infrastructure progress to support EUV HVM implementation.

Citation Download Citation

Y. David Chan "EUV mask readiness and challenges for the 22nm half pitch and beyond", Proc. SPIE 7985, 27th European Mask and Lithography Conference, 79850A (1 April 2011); https://doi.org/10.1117/12.896913

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