A method for fabricating below 22nm feature patterns in quartz mold

Atsunori Terasaki; Junichi Seki; Haruhito Ono

doi:10.1117/12.771561

20 March 2008 A method for fabricating below 22nm feature patterns in quartz mold

Atsunori Terasaki, Junichi Seki, Haruhito Ono

Proceedings Volume 6921, Emerging Lithographic Technologies XII; 69211N (2008) https://doi.org/10.1117/12.771561
Event: SPIE Advanced Lithography, 2008, San Jose, California, United States

Abstract

In nanoimprint with UV curable resin, a mold fabricated by etching quartz by using Cr as a hard mask is generally used. For fine pattern fabrication, Cr fine pattern etching technology is very important. Usually, the realization of enough resolution needs a resist thickness reduction, which, however, makes it difficult to etch extremely fine Cr features with vertical sidewalls. Here, we propose a brand-new method called "reverse EB process". In this method, an electron-beam (EB) resist pattern is first reversed by a plasma-robust material, with which as a mask, the Cr is then etched to form a hard mask for the mold etching. By this process, we have realized a quartz mold with patterns of 16nm in half pitch at minimum.

Citation Download Citation

Atsunori Terasaki, Junichi Seki, and Haruhito Ono "A method for fabricating below 22nm feature patterns in quartz mold", Proc. SPIE 6921, Emerging Lithographic Technologies XII, 69211N (20 March 2008); https://doi.org/10.1117/12.771561

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