The evolution of pattern placement metrology for mask making

Dirk Beyer; Norbert Rosenkranz; Carola Blaesing-Bangert

doi:10.1117/12.896892

1 April 2011 The evolution of pattern placement metrology for mask making

Dirk Beyer, Norbert Rosenkranz, Carola Blaesing-Bangert

Proceedings Volume 7985, 27th European Mask and Lithography Conference; 79850D (2011) https://doi.org/10.1117/12.896892
Event: 27th European Mask and Lithography Conference, 2011, Dresden, Germany

Abstract

The image placement is and remains an important aspect of photomask metrology. Not only the position accuracy of features for an individual mask - representing one layer in a complete chip design have to meet stringent requirements, the complete mask set for all layers have to match in order to get a functional device. At a time were registration and overlay errors were counted in micrometer it was enough to compare one mask with another by a so called overlay machine. This approach works sufficiently until placement specification reached the "nanometre range" and the development of dedicated 2D coordinate measurement systems became necessary. Since then, pattern placement metrology tools became "enabler" for the continuous improvement of pattern placement accuracy on photomask and the improvement of the final wafer overlay error. This paper reviews and discuss current trends of pattern placement metrology on photomasks, highlighting the major error drivers and will focus on current and future requirements for in - die registration.

Citation Download Citation

Dirk Beyer, Norbert Rosenkranz, and Carola Blaesing-Bangert "The evolution of pattern placement metrology for mask making", Proc. SPIE 7985, 27th European Mask and Lithography Conference, 79850D (1 April 2011); https://doi.org/10.1117/12.896892

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