On the road to and beyond the 22nm half-pitch on chip patterning technology, 13.5nm EUVL is widely considered the best next technology generation following deep ultraviolet lithography. The availability of an actinic measurement system for the printability analysis of mask defects to ensure defect-free mask manufacturing and cost-effective high-volume EUV production is an infrastructural prerequisite for the EUVL roadmap and represents a significant step toward readiness for commercialization of EUV for high-volume-manufacturing . Carl Zeiss and SEMATECH's EUVL Mask Infrastructure (EMI) program started a concept study and feasibility plan for a tool that emulates the aerial image formed by a EUV lithography scanner supporting the 22 nm half-pitch node requirements with extendibility to the 16nm half-pitch node. The study is targeting a feasible concept for the AIMSTM EUV platform, bridging a significant gap for EUV mask metrology.© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.