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Proceedings Article

The 2002 to 2010 mask survey trend analysis

[+] Author Affiliations
Greg Hughes, David Chan

Sematech (USA)

Proc. SPIE 7985, 27th European Mask and Lithography Conference, 798502 (March 16, 2011); doi:10.1117/12.896880
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From Conference Volume 7985

  • 27th European Mask and Lithography Conference
  • Uwe F.W. Behringer
  • Dresden, Germany | January 18, 2011

abstract

Microelectronics industry leaders consistently cite the cost and cycle time of mask technology and mask supply as top critical issues. A survey was designed with input from semiconductor company mask technologists and merchant mask suppliers and support from SEMATECH to gather information about the mask industry as an objective assessment of its overall condition. This year's assessment was the ninth in the current series of annual reports. Its data were presented in detail at BACUS, and the detailed trend analysis is presented at EMLC. With continued industry support, the report can be used as a baseline to gain perspective on the technical and business status of the mask and microelectronics industries. The report will continue to serve as a valuable reference to identify the strengths and opportunities of the mask industry. Results will be used to guide future investments in critical path issues. This year's survey is basically the same as the 2005 through 2010 surveys. Questions are grouped into six categories: General Business Profile Information, Data Processing, Yields and Yield Loss Mechanisms, Delivery Times, Returns, and Services. Within each category are multiple questions that ultimately create a detailed profile of both the business and technical status of the critical mask industry.

© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Citation

Greg Hughes and David Chan
"The 2002 to 2010 mask survey trend analysis", Proc. SPIE 7985, 27th European Mask and Lithography Conference, 798502 (March 16, 2011); doi:10.1117/12.896880; http://dx.doi.org/10.1117/12.896880


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