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Proceedings Article

Multiresolution mask writing

[+] Author Affiliations
Emile Sahouria

Mentor Graphics Corp. (USA)

Proc. SPIE 7985, 27th European Mask and Lithography Conference, 798503 (April 01, 2011); doi:10.1117/12.881929
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From Conference Volume 7985

  • 27th European Mask and Lithography Conference
  • Uwe F.W. Behringer
  • Dresden, Germany | January 18, 2011

abstract

We propose changing the shot pattern between passes in multi-pass vector e-beam writing in order to reduce total shot count. One pass is detailed while the other is simplified. Mask process correction is used to produce the correct image from the sum of the exposures; a fundamental contstraint is enforced to retain process latitude. Results from a software implementation show a total shot savings in the range of 18 to 31 percent for two-pass writing versus the conventional writing scheme in which each pass writes identical shot sets. Simulation results demonstrate the feasibility of the technique.

© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Citation

Emile Sahouria
"Multiresolution mask writing", Proc. SPIE 7985, 27th European Mask and Lithography Conference, 798503 (April 01, 2011); doi:10.1117/12.881929; http://dx.doi.org/10.1117/12.881929


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