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Proceedings Article

MSB for ILT masks

[+] Author Affiliations
Juergen Gramss, Ulf Weidenmueller, Arnd Stoeckel, Renate Jaritz, Hans-Joachim Doering, Monika Boettcher

Vistec Electron Beam GmbH (Germany)

Proc. SPIE 7985, 27th European Mask and Lithography Conference, 798504 (April 01, 2011); doi:10.1117/12.896883
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From Conference Volume 7985

  • 27th European Mask and Lithography Conference
  • Uwe F.W. Behringer
  • Dresden, Germany | January 18, 2011

abstract

Multi Shaped Beam (MSB) throughput simulation results have already been published in the past. An IC mask set of a 32nm node logic device was one of the applications that had been analyzed in more detail. In this paper we want to highlight results of shot count and write time evaluations done for Inverse Lithography Technology (ILT) masks targeting the 22nm technology node. The test pattern data we used for these practice-oriented analyses was designed by DNP / Japan and created by Luminescent Technologies, Inc. / USA. To achieve reliable evaluation results, the influence of different MSB configurations on shot count and mask write time has been taken into account and will be discussed here. Exposure results of pattern details are presented and compared with the fracturing result. The MSB engineering tool we used for our investigations covers such major components like an electron-optical column, a precision x/y stage and the MSB data path.

© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Citation

Juergen Gramss ; Ulf Weidenmueller ; Arnd Stoeckel ; Renate Jaritz ; Hans-Joachim Doering, et al.
"MSB for ILT masks", Proc. SPIE 7985, 27th European Mask and Lithography Conference, 798504 (April 01, 2011); doi:10.1117/12.896883; http://dx.doi.org/10.1117/12.896883


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