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Proceedings Article

NGL masks: development status and issue

[+] Author Affiliations
Naoya Hayashi, Tsukasa Abe, Yuichi Inazuki, Tadahiko Takikawa, Hiroshi Mohri

Dai Nippon Printing Co., Ltd. (Japan)

Takeya Shimomura

DNP Corp. USA (USA)

Proc. SPIE 7985, 27th European Mask and Lithography Conference, 798505 (April 01, 2011); doi:10.1117/12.896886
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From Conference Volume 7985

  • 27th European Mask and Lithography Conference
  • Uwe F.W. Behringer
  • Dresden, Germany | January 18, 2011

abstract

Semiconductor lithography candidates toward 2xnm node and beyond include wide variety of options, such as extension of 193i, EUVL, NIL, and ML2. Most of those candidates, except ML2, need critical mask feature to realize effective high volume manufacturing. In this presentation, EUVL mask technology update and future issues will be presented.

© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Citation

Naoya Hayashi ; Tsukasa Abe ; Takeya Shimomura ; Yuichi Inazuki ; Tadahiko Takikawa, et al.
"NGL masks: development status and issue", Proc. SPIE 7985, 27th European Mask and Lithography Conference, 798505 (April 01, 2011); doi:10.1117/12.896886; http://dx.doi.org/10.1117/12.896886


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