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Proceedings Article

Third order silicon (Si) nitride side-walled grating using silicon-on- insulatir (SOI)

[+] Author Affiliations
C. E. Png, S. T. Lim, E. P. Li

A*STAR (Singapore)

A. J. Danner

A*STAR (Singapore) and National Univ. of Singapore (Singapore)

Proc. SPIE 7986, Passive Components and Fiber-Based Devices VII, 79860I (January 19, 2011); doi:10.1117/12.888579
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From Conference Volume 7986

  • Passive Components and Fiber-Based Devices VII
  • Perry P. Shum
  • Shanghai, China | December 08, 2010

abstract

In this work, we demonstrate three-dimensional (3D) simulations of a third order silicon-based grating with full-width-half- maximum (FWKM) reflection bandwidth of 4nm. This is more than 2 orders of magnitude improvement over a conventional side-walled grating structure. The relationship of grating performance over the infra-red wavelength range is also presented. In order to make this device active, we included an active element, to be inserted in the silicon layer by way of a pin layout. The device has a low power consumption of 114nW and its intrinsic device modulation speed is predicted to function at 40.5MHz.

© (2010) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Citation

C. E. Png ; S. T. Lim ; E. P. Li and A. J. Danner
"Third order silicon (Si) nitride side-walled grating using silicon-on- insulatir (SOI)", Proc. SPIE 7986, Passive Components and Fiber-Based Devices VII, 79860I (January 19, 2011); doi:10.1117/12.888579; http://dx.doi.org/10.1117/12.888579


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