Paper
19 January 2011 Third order silicon (Si) nitride side-walled grating using silicon-on- insulatir (SOI)
C. E. Png, S. T. Lim, E. P. Li, A. J. Danner
Author Affiliations +
Proceedings Volume 7986, Passive Components and Fiber-Based Devices VII; 79860I (2011) https://doi.org/10.1117/12.888579
Event: Asia Communications and Photonics Conference and Exhibition, 2010, Shanghai, Shanghai, China
Abstract
In this work, we demonstrate three-dimensional (3D) simulations of a third order silicon-based grating with full-width-half- maximum (FWKM) reflection bandwidth of 4nm. This is more than 2 orders of magnitude improvement over a conventional side-walled grating structure. The relationship of grating performance over the infra-red wavelength range is also presented. In order to make this device active, we included an active element, to be inserted in the silicon layer by way of a pin layout. The device has a low power consumption of 114nW and its intrinsic device modulation speed is predicted to function at 40.5MHz.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
C. E. Png, S. T. Lim, E. P. Li, and A. J. Danner "Third order silicon (Si) nitride side-walled grating using silicon-on- insulatir (SOI)", Proc. SPIE 7986, Passive Components and Fiber-Based Devices VII, 79860I (19 January 2011); https://doi.org/10.1117/12.888579
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Silicon

Refractive index

Modulation

Electrons

Fiber Bragg gratings

Optical design

Silica

Back to Top