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Proceedings Article

The preferential nucleation sites of self-assembled quantum dots with the influence of interfacial dislocation network

[+] Author Affiliations
Shuai Zhou, Yumin Liu, Zhongyuan Yu

Beijing Univ. of Posts and Telecommunications (China)

Proc. SPIE 7987, Optoelectronic Materials and Devices V, 79870C (January 07, 2011); doi:10.1117/12.888354
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From Conference Volume 7987

  • Optoelectronic Materials and Devices V
  • Fumio Koyama; Shun Lien Chuang; Guang-Hua Duan; Yidong Huang
  • Shanghai, China | December 08, 2010

abstract

The strain field and elastic energy due to interfacial misfit dislocation networks near the free surface have been calculated analytically. The result predicted the preferential nucleation sites of self-assembled quantum dots with the influence of dislocation networks. Compared with Green function method, our solution is simple, direct and can solve the problem completely.

© (2010) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Citation

Shuai Zhou ; Yumin Liu and Zhongyuan Yu
"The preferential nucleation sites of self-assembled quantum dots with the influence of interfacial dislocation network", Proc. SPIE 7987, Optoelectronic Materials and Devices V, 79870C (January 07, 2011); doi:10.1117/12.888354; http://dx.doi.org/10.1117/12.888354


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