It has been observed experimentally that the band edge photoluminescence of GaInNAs Quantum well (QW) materials is broadened resulting from band-tailing, localised states or conduction band edge fluctuations. In this paper we develop a model for N compositional fluctuations causing conduction band edge fluctuations which localise the electrons into the resulting quantum dots (QDs). The electron dynamics in the QDs and QW states are examined using a rate equation approach and the carrier populations presented as a function of barrier height and temperature. This mechanism could lead to broad gain in GaInAsN QW structures which could be useful for broad band SOAs for optical communications.© (2010) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.