Phonon engineering in nanoscale layered structures

A. Rostami; A. Alizade; H. Bagban; T. Alizade; H. Balazadeh Bahar

doi:10.1117/12.887838

7 January 2011 Phonon engineering in nanoscale layered structures

A. Rostami, A. Alizade, H. Bagban, T. Alizade, H. Balazadeh Bahar

Proceedings Volume 7987, Optoelectronic Materials and Devices V; 79870F (2011) https://doi.org/10.1117/12.887838
Event: Asia Communications and Photonics Conference and Exhibition, 2010, Shanghai, Shanghai, China

Abstract

Thermal conductivity in GaN/AlGaN heterostructures is investigated by solving the steady-state phonon Boltzman equation in the relaxation-time approximation using phonon density of state, average group velocity and phonon relaxation time. In this paper dispersion curves, group velocity, density of states of energy, relaxation time of phonon and finally thermal conduction of several types of symmetric and asymmetric nanostructures are simulated. It has been concluded that proper selection of layer widths yields minimum thermal conduction in the considered structure. Also, making the structure asymmetric, affects the thermal conduction.

Citation Download Citation

A. Rostami, A. Alizade, H. Bagban, T. Alizade, and H. Balazadeh Bahar "Phonon engineering in nanoscale layered structures", Proc. SPIE 7987, Optoelectronic Materials and Devices V, 79870F (7 January 2011); https://doi.org/10.1117/12.887838

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