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Proceedings Article

Advances of AlGaN-based high-efficiency deep-UV LEDs

[+] Author Affiliations
Hideki Hirayama

RIKEN (Japan) and JST, CREST (Japan)

Proc. SPIE 7987, Optoelectronic Materials and Devices V, 79870G (January 07, 2011); doi:10.1117/12.888927
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From Conference Volume 7987

  • Optoelectronic Materials and Devices V
  • Fumio Koyama; Shun Lien Chuang; Guang-Hua Duan; Yidong Huang
  • Shanghai, China | December 08, 2010

abstract

We demonstrated AlGaN-based multi-quantum-well (MQW) deep-ultraviolet (UV) light-emitting diodes (LEDs) with wavelengths in the range of 222-351 nm, fabricated on low threading dislocation density (TDD) AlN template on sapphire. High internal quantum efficiency (IQE) of 50-80% was observed from AlGaN or quaternary InAlGaN MQWs by fabricating them on low TDD AlN templates. Also, an electron injection efficiency (EIE) was markedly improved by using multi-quantum barrier (MQB). Over 20 mW cw output power was obtained for 256-275 nm LEDs, which will be useful for sterilization applications. The maximum external quantum efficiencies (EQEs) were 1.8 and 2.75% for 247 and 270 nm AlGaN-LEDs, respectively.

© (2010) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Citation

Hideki Hirayama
"Advances of AlGaN-based high-efficiency deep-UV LEDs", Proc. SPIE 7987, Optoelectronic Materials and Devices V, 79870G (January 07, 2011); doi:10.1117/12.888927; http://dx.doi.org/10.1117/12.888927


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