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Proceedings Article

Growth of n-doped GaAs nanowires by Au-assisted metalorganic chemical vapor deposition: effect of flux rates of n-type dopants

[+] Author Affiliations
Jingwei Guo, Hui Huang, Minjia Liu, Xiaomin Ren, Shiwei Cai, Wei Wang, Qi Wang, Yongqing Huang, Xia Zhang

Beijing Univ. of Posts and Telecommunications (China)

Proc. SPIE 7987, Optoelectronic Materials and Devices V, 79870M (January 07, 2011); doi:10.1117/12.888518
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From Conference Volume 7987

  • Optoelectronic Materials and Devices V
  • Fumio Koyama; Shun Lien Chuang; Guang-Hua Duan; Yidong Huang
  • Shanghai, China | December 08, 2010

abstract

N-doped GaAs nanowires (NWs) were grown on GaAs (111) B substrate by means of vapor-liquid-solid (VLS) mechanism in a metalorganic chemical vapor deposition (MOCVD) system. Two flux rates of n-type dopants used for GaAs NWs growth were researched. For comparison, undoped GaAs NWs were grown at the same conditions. It is found that all NWs are vertical to the substrate and no lateral growth occurs. The growth rate is proportional the flux rates of n dopant. It is observed that there is Gibbs-Thomson effect in doped NWs. Pure zinc blende structures without any stacking faults from bottom to top for all three samples were achieved.

© (2010) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Citation

Jingwei Guo ; Hui Huang ; Minjia Liu ; Xiaomin Ren ; Shiwei Cai, et al.
"Growth of n-doped GaAs nanowires by Au-assisted metalorganic chemical vapor deposition: effect of flux rates of n-type dopants", Proc. SPIE 7987, Optoelectronic Materials and Devices V, 79870M (January 07, 2011); doi:10.1117/12.888518; http://dx.doi.org/10.1117/12.888518


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