Raman scattering enhancement characteristic of Nb-doped silica fiber

Kun Zhang; Zhenyi Chen; Na Chen; Qiang Guo; Hua Bai; Fufei Pang; Tingyun Wang

doi:10.1117/12.888568

7 January 2011 Raman scattering enhancement characteristic of Nb-doped silica fiber

Kun Zhang, Zhenyi Chen, Na Chen, Qiang Guo, Hua Bai, Fufei Pang, Tingyun Wang

Proceedings Volume 7987, Optoelectronic Materials and Devices V; 79870T (2011) https://doi.org/10.1117/12.888568
Event: Asia Communications and Photonics Conference and Exhibition, 2010, Shanghai, Shanghai, China

Abstract

Raman scattering enhancement characteristic of a new kind of Nb-doped silica fiber has been studied in this paper. This Nb-doped special silica optical fiber is fabricated on Modified Chemical Vapor Deposition (MCVD) (which is the traditional fiber preform fabrication technologies) combined with Atomic Layer Deposition (ALD). Meanwhile, Raman spectrum of different length Nb-doped special silica optical fiber samples has been measured with the 785nm exciting light. Then, it develops the measurement comparison between Nb-doped special silica optical fiber and conventional single-mode optical fiber in the wavelength range from 820nm to 920nm. The measuring results indicate that the new Nb-doped special silica optical fiber shows higher Raman scattering intensity compared with conventional single-mode optical fiber. On the other hand, the inferred spectrum of the new Nb-doped special silica optical fiber is also measured, and its measurement wavenumber range is from 400 cm^-1 to 4000 cm^-1. Finally, the loss spectrum of the Nb-doped special silica optical fiber is measured and its loss at 1550nm is 0.01dB/m.

Citation Download Citation

Kun Zhang, Zhenyi Chen, Na Chen, Qiang Guo, Hua Bai, Fufei Pang, and Tingyun Wang "Raman scattering enhancement characteristic of Nb-doped silica fiber", Proc. SPIE 7987, Optoelectronic Materials and Devices V, 79870T (7 January 2011); https://doi.org/10.1117/12.888568

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