Full Content is available to subscribers

Subscribe/Learn More  >
Proceedings Article

Double patterning for 32nm and below: an update

[+] Author Affiliations
Jo Finders, Bert Vleeming, Henry Megens, Birgitt Hepp

ASML (Netherlands)

Mircea Dusa

ASML US, Inc.

Mireille Maenhoudt, Shaunee Cheng, Tom Vandeweyer

IMEC vzw (Belgium)

Proc. SPIE 6924, Optical Microlithography XXI, 692408 (March 18, 2008); doi:10.1117/12.772780
Text Size: A A A
From Conference Volume 6924

  • Optical Microlithography XXI
  • San Jose, California, USA | February 24, 2008

abstract

Double patterning lithography - either with two litho and etch steps or through the use of a sacrificial spacer layer, have equal complexity and particularly tight requirements on CDU and Overlay. Both techniques pose difficult challenges to process control, metrology and integration, but seem feasible for the 32nm node. In this paper, we report results in exploring CDU and overlay performance at 32nm 1/2 pitch resolution of two double patterning technology options, Dual Photo Etch, LELE and sidewall spacer with sacrificial layer. We discuss specific aspects of CD control present in any double patterning lithography, the existence of multiple populations of lines and spaces, with overlay becoming part of CDU budget. The existence of multiple and generally uncorrelated CD populations, demands utilization of full field and full wafer corrections to bring together the CDU of these multiple populations in order to meet comparable 10% CDU as in single exposure. We present experimental results of interfield and intrafield CD and overlay statistical and spatial distributions confirming capability to improve these distributions to meet dimensional and overlay control levels required by 32nm node. After compensation, we achieved a CDU control for each population, of 2nm or better and 3nm overlay on multiple wafers and multiple state of art, hyper NA immersion scanners. Results confirmed our assumptions for existence of multiple CDU populations entangled overlay into CDU.

© (2008) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Citation

Jo Finders ; Mircea Dusa ; Bert Vleeming ; Henry Megens ; Birgitt Hepp, et al.
"Double patterning for 32nm and below: an update", Proc. SPIE 6924, Optical Microlithography XXI, 692408 (March 18, 2008); doi:10.1117/12.772780; http://dx.doi.org/10.1117/12.772780


Access This Proceeding
Sign in or Create a personal account to Buy this proceeding ($15 for members, $18 for non-members).

Figures

Tables

NOTE:
Citing articles are presented as examples only. In non-demo SCM6 implementation, integration with CrossRef’s "Cited By" API will populate this tab (http://www.crossref.org/citedby.html).

Some tools below are only available to our subscribers or users with an online account.

Related Content

Customize your page view by dragging & repositioning the boxes below.

Related Book Chapters

Topic Collections

Advertisement
  • Don't have an account?
  • Subscribe to the SPIE Digital Library
  • Create a FREE account to sign up for Digital Library content alerts and gain access to institutional subscriptions remotely.
Access This Proceeding
Sign in or Create a personal account to Buy this proceeding ($15 for members, $18 for non-members).
Access This Proceeding
Sign in or Create a personal account to Buy this article ($15 for members, $18 for non-members).
Access This Chapter

Access to SPIE eBooks is limited to subscribing institutions and is not available as part of a personal subscription. Print or electronic versions of individual SPIE books may be purchased via SPIE.org.