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Proceedings Article

InP lateral overgrowth technology for silicon photonics

[+] Author Affiliations
Zhechao Wang, Lech Wosinski

Royal Institute of Technology (Sweden) and JORCEP (Sweden)

Carl Junesand, Wondwosen Metaferia, Chen Hu, Sebastian Lourdudoss

Royal Institute of Technology (Sweden)

Proc. SPIE 7987, Optoelectronic Materials and Devices V, 798706 (January 07, 2011); doi:10.1117/12.887973
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From Conference Volume 7987

  • Optoelectronic Materials and Devices V
  • Fumio Koyama; Shun Lien Chuang; Guang-Hua Duan; Yidong Huang
  • Shanghai, China | December 08, 2010

abstract

Epitaxial Lateral Overgrowth has been proposed as a key technology of a novel hybrid integration platform for active silicon photonic components. By fabricating silicon oxide mask on top of a thin InP seed layer, we can use the so called defect necking effect to filter out the threading dislocations propagating from the seed layer. By optimizing the process, thin dislocation free InP layers have been successfully obtained on top of silicon wafer. The obtained characterization results show that the grown InP layer has very high quality, which can be used as the base for further process of active photonic components on top of silicon.

© (2010) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Citation

Zhechao Wang ; Carl Junesand ; Wondwosen Metaferia ; Chen Hu ; Sebastian Lourdudoss, et al.
"InP lateral overgrowth technology for silicon photonics", Proc. SPIE 7987, Optoelectronic Materials and Devices V, 798706 (January 07, 2011); doi:10.1117/12.887973; http://dx.doi.org/10.1117/12.887973


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