Validation and application of a mask model for inverse lithography

Thuc H. Dam; Xin Zhou; Dongxue Chen; Anthony Adamov; Danping Peng; Bob Gleason

doi:10.1117/12.773081

19 March 2008 Validation and application of a mask model for inverse lithography

Thuc H. Dam, Xin Zhou, Dongxue Chen, Anthony Adamov, Danping Peng, Bob Gleason

Proceedings Volume 6925, Design for Manufacturability through Design-Process Integration II; 69251J (2008) https://doi.org/10.1117/12.773081
Event: SPIE Advanced Lithography, 2008, San Jose, California, United States

Abstract

As photomask critical dimensions shrink significantly below the exposure wavelength and the angle of off-axis illumination increases, the use of Kirchhoff thin mask approximation cannot capture diffraction and polarization effects that occur at a topographical mask surface. Such approximation errors result in inaccurate models that lead to poor prediction for image simulation, which can waste time and money during lithographic process development cycle. The real effects of a thick mask can be simulated using finite difference time domain (FDTD) electromagnetic (EM) field calculations, or be better approximated with less error using such techniques such as boundary layer or various Fourier transformation techniques.

Citation Download Citation

Thuc H. Dam, Xin Zhou, Dongxue Chen, Anthony Adamov, Danping Peng, and Bob Gleason "Validation and application of a mask model for inverse lithography", Proc. SPIE 6925, Design for Manufacturability through Design-Process Integration II, 69251J (19 March 2008); https://doi.org/10.1117/12.773081

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