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Proceedings Article

Femtosecond pulse damage behavior of oxide dielectric thin films

[+] Author Affiliations
Mark Mero, Joachim Zeller, Wolfgang G. Rudolph

Univ. of New Mexico (USA)

Jianhua Liu

Fudan Univ. (China)

Kai Starke, Detlev Ristau

Laser Zentrum Hannover e.V. (Germany)

Proc. SPIE 5273, Laser-Induced Damage in Optical Materials: 2003, 8 (June 10, 2004); doi:10.1117/12.524571
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From Conference Volume 5273

  • Laser-Induced Damage in Optical Materials: 2003
  • Gregory J. Exarhos; Arthur H. Guenther; Norbert Kaiser; Keith L. Lewis; M. J. Soileau; Christopher J. Stolz
  • Boulder, CO | September 22, 2003

abstract

Pulse duration and band-gap scaling of the laser breakdown threshold fluence of oxide dielectrics were measured using various (TiO2, Ta2O5, HfO2, Al2O3, and SiO2) single layer thin films. The observed scaling with pulse duration was explained by an empirical model including multi-photon and avalanche ionization, and conduction band electron decay. The results suggest the formation of self-trapped excitons on a sub-ps time-scale, which can cause significant energy transfer to the lattice. At constant pulse duration, the band-gap scaling was found to be approximately linear. This linear scaling can be explained by the Keldysh photo-ionization theory and avalanche ionization in the flux-doubling approximation.

© (2004) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Citation

Mark Mero ; Jianhua Liu ; Joachim Zeller ; Wolfgang G. Rudolph ; Kai Starke, et al.
"Femtosecond pulse damage behavior of oxide dielectric thin films", Proc. SPIE 5273, Laser-Induced Damage in Optical Materials: 2003, 8 (June 10, 2004); doi:10.1117/12.524571; http://dx.doi.org/10.1117/12.524571


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