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Proceedings Article

Layer-thickness-dependent formation of Si-nanocrystals embedded in amorphous Si/SiO2 multilayers

[+] Author Affiliations
Keyong Chen, Xue Feng, Yidong Huang

Tsinghua Univ. (China)

Proc. SPIE 7991, Display, Solid-State Lighting, Photovoltaics, and Optoelectronics in Energy II, 799102 (January 11, 2011); doi:10.1117/12.888342
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From Conference Volume 7991

  • Display, Solid-State Lighting, Photovoltaics, and Optoelectronics in Energy II
  • Heonsu Jeon; Min Gu; Yi Luo; Chih-Chung Yang; Muqing Liu
  • Shanghai, China | December 08, 2010

abstract

Layer-thickness dependence of Si-nanocrystal (Si-NC) formation induced by furnace annealing in amorphous Si (a-Si) /SiO2 multilayers is experimentally demonstrated with a radio-frequency-sputtered sample that has a-Si layers with different thicknesses. Further, a modified model is developed to explain the Si-NC formation based on the Gibbs free energy variation and it takes into account the whole formation process including nucleation and following growth. The theoretical results show that there is a lower limit of Si layer thickness below which the crystal formation cannot occur for a-Si/SiO2 multilayers, and the oxide interfaces cannot constrain the lateral growth of Si-NCs, which may lead to their touches within the Si layers.

© (2010) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Citation

Keyong Chen ; Xue Feng and Yidong Huang
"Layer-thickness-dependent formation of Si-nanocrystals embedded in amorphous Si/SiO2 multilayers", Proc. SPIE 7991, Display, Solid-State Lighting, Photovoltaics, and Optoelectronics in Energy II, 799102 (January 11, 2011); doi:10.1117/12.888342; http://dx.doi.org/10.1117/12.888342


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