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Proceedings Article

Advances in high-brightness semiconductor lasers

[+] Author Affiliations
M. L. Osowski, W. Hu, R. M. Lammert, S. W. Oh, P. T. Rudy, T. Stakelon, L. Vaissie, J. E. Ungar

QPC Lasers, Inc.

Proc. SPIE 6952, Laser Source Technology for Defense and Security IV, 695208 (April 14, 2008); doi:10.1117/12.777065
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From Conference Volume 6952

  • Laser Source Technology for Defense and Security IV
  • Mark Dubinskii; Gary L. Wood
  • Orlando, FL | March 16, 2008

abstract

We present recent advances in high power semiconductor laser bars and arrays at near infrared and eye-safe wavelengths. We report on increased spectral brightness with internal gratings to narrow and stabilize the spectrum and increased spatial brightness in multimode and single mode devices. These devices have the potential to dramatically improve diode pumped systems and enable new direct diode applications.

© (2008) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Citation

M. L. Osowski ; W. Hu ; R. M. Lammert ; S. W. Oh ; P. T. Rudy, et al.
"Advances in high-brightness semiconductor lasers", Proc. SPIE 6952, Laser Source Technology for Defense and Security IV, 695208 (April 14, 2008); doi:10.1117/12.777065; http://dx.doi.org/10.1117/12.777065


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