Terahertz emission from semiconductors due to the lateral surface photocurrent

P. A. Ziaziulia; V. L. Malevich; I. S. Manak

doi:10.1117/12.881873

11 January 2011 Terahertz emission from semiconductors due to the lateral surface photocurrent

P. A. Ziaziulia, V. L. Malevich, I. S. Manak

Proceedings Volume 7993, ICONO 2010: International Conference on Coherent and Nonlinear Optics; 799322 (2011) https://doi.org/10.1117/12.881873
Event: International Conference on Coherent and Nonlinear Optics (ICONO 2010) and International Conference on Lasers, Applications and Technologies (LAT 2010), 2010, Kazan, Russian Federation

Abstract

The lateral photocurrent caused by anisotropic momentum distribution of photoelectrons in semiconductor excited by linearly polarized femtosecond laser radiation is calculated analytically and numerically with the use of particle method. We have considered three mechanisms of this effect: diffusive scattering of photoelectrons on the surface, nonparabolicity of conduction band and dependence of electron momentum relaxation time on energy. It has been shown that contributions of the lateral and normal photocurrent components to terahertz emission can be comparable.

Citation Download Citation

P. A. Ziaziulia, V. L. Malevich, and I. S. Manak "Terahertz emission from semiconductors due to the lateral surface photocurrent", Proc. SPIE 7993, ICONO 2010: International Conference on Coherent and Nonlinear Optics, 799322 (11 January 2011); https://doi.org/10.1117/12.881873

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