Paper
11 January 2011 Terahertz time-domain spectroscopy setup based on InAs emitter
G. V. Sinitsyn, A. V. Lyakhnovich, V. L. Malevich, N. S. Kazak, B. A. Bushuk, S. B. Bushuk
Author Affiliations +
Proceedings Volume 7993, ICONO 2010: International Conference on Coherent and Nonlinear Optics; 799328 (2011) https://doi.org/10.1117/12.881876
Event: International Conference on Coherent and Nonlinear Optics (ICONO 2010) and International Conference on Lasers, Applications and Technologies (LAT 2010), 2010, Kazan, Russian Federation
Abstract
Terahertz emission from indium arsenide excited by femtosecond laser pulses was numerically simulated with the use of particle method. It is shown that the largest terahertz emission is achieved when 800 nm femtosecond laser pulses are used for excitation of InAs. We describe terahertz time-domain spectroscopy setup built that uses a relatively simple terahertz emitter on the basis of indium arsenide plate.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
G. V. Sinitsyn, A. V. Lyakhnovich, V. L. Malevich, N. S. Kazak, B. A. Bushuk, and S. B. Bushuk "Terahertz time-domain spectroscopy setup based on InAs emitter", Proc. SPIE 7993, ICONO 2010: International Conference on Coherent and Nonlinear Optics, 799328 (11 January 2011); https://doi.org/10.1117/12.881876
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KEYWORDS
Terahertz radiation

Indium arsenide

Femtosecond phenomena

Photons

Semiconductors

Spectroscopy

Electrons

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