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Proceedings Article

Defects in a bulk GaAs and Q-switching of a Nd:YAG laser with a GaAs output coupler

[+] Author Affiliations
Sh. Payziyev, S. Bakhramov, A. Kasimov, F. Shayimov

Akadempribor Scientific and Production Association (Uzbekistan)

Proc. SPIE 7994, LAT 2010: International Conference on Lasers, Applications, and Technologies, 79940D (February 07, 2011); doi:10.1117/12.881110
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From Conference Volume 7994

  • LAT 2010: International Conference on Lasers, Applications, and Technologies
  • Vladislav Panchenko; Gérard Mourou; Aleksei M. Zheltikov
  • Kazan, Russian Federation | August 23, 2010

abstract

By using a bulk GaAs as an output coupler as well as a saturable absorber, with changing of concentration of defects inside the laser cavity, Q-switching of flash-lamp pumped Nd:YAG laser has been studied. It is shown that the mechanism of formation of the laser pulses, in a wide range of duration which were reported in a lot of previous papers is caused by the intracavity changes of the defect concentration in a GaAs.

© (2010) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Citation

Sh. Payziyev ; S. Bakhramov ; A. Kasimov and F. Shayimov
"Defects in a bulk GaAs and Q-switching of a Nd:YAG laser with a GaAs output coupler", Proc. SPIE 7994, LAT 2010: International Conference on Lasers, Applications, and Technologies, 79940D (February 07, 2011); doi:10.1117/12.881110; http://dx.doi.org/10.1117/12.881110


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