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Proceedings Article

Quantum efficiency increasing and lasing in the quantum wells based on ZnO

[+] Author Affiliations
Andrey A. Lotin, Oleg A. Novodvorsky, Liubov S. Parshina, Evgeny V. Khaydukov, Dmitry A. Zuev, Olga D. Khramova, Vladislav Ya. Panchenko

Institute on Laser and Information Technologies (Russian Federation)

Proc. SPIE 7994, LAT 2010: International Conference on Lasers, Applications, and Technologies, 79940T (February 07, 2011); doi:10.1117/12.881484
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From Conference Volume 7994

  • LAT 2010: International Conference on Lasers, Applications, and Technologies
  • Vladislav Panchenko; Gérard Mourou; Aleksei M. Zheltikov
  • Kazan, Russian Federation | August 23, 2010

abstract

The Mg0.27Zn0.73O/ZnO multiple quantum wells with different well width Lw have been grown by pulsed laser deposition method. The interface roughness of quantum wells was inherited from the bottom one and did not exceed 1 nm. The quantum confinement effect has been observed. The exciton binding energy of the two-dimensional Mg0.27Zn0.73O/ZnO structures was two times higher in comparison with the bulk ZnO. A sharp increase of exciton peak intensity in the photoluminescence spectra at well width reduction was observed. The optical excited stimulated emission in quantum wells Mg 0.27Zn0.73O/ZnO with an excitation threshold ~210 kW/cm2 has been demonstrated.

© (2010) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Citation

Andrey A. Lotin ; Oleg A. Novodvorsky ; Liubov S. Parshina ; Evgeny V. Khaydukov ; Dmitry A. Zuev, et al.
"Quantum efficiency increasing and lasing in the quantum wells based on ZnO", Proc. SPIE 7994, LAT 2010: International Conference on Lasers, Applications, and Technologies, 79940T (February 07, 2011); doi:10.1117/12.881484; http://dx.doi.org/10.1117/12.881484


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