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Proceedings Article

Amplification and lasing at M-band of luminescence

[+] Author Affiliations
P. I. Khadzhi

Institute of Applied Physics (Moldova) and Dniester State Univ. (Moldova)

I. V. Beloussov

Institute of Applied Physics (Moldova)

N. N. Rosanov, S. V. Fedorov

Vavilov State Optical Institute (Russian Federation)

D. A. Markov, A. V. Corovai

Dniester State Univ. (Moldova)

Proc. SPIE 7994, LAT 2010: International Conference on Lasers, Applications, and Technologies, 799404 (February 07, 2011); doi:10.1117/12.881507
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From Conference Volume 7994

  • LAT 2010: International Conference on Lasers, Applications, and Technologies
  • Vladislav Panchenko; Gérard Mourou; Aleksei M. Zheltikov
  • Kazan, Russian Federation | August 23, 2010

abstract

A new lasing mechanism for semiconductors like CuCl, CuBr is proposed based on the two-photon pumping of biexcitons from the ground state of the crystal and generation or amplification of light in the region of M-band of luminescence due to the optical exciton-biexciton conversion. It was shown that the net gain essentially depends on the level of two-photon pumping and rapidly decreases deep into the crystal due to the spatial depletion of pump radiation. Estimations for CuCl give the values of lasing photons with the energy about 3,2 eV and the maximum small signal gain about the value of the exciton absorption coefficient.

© (2010) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Citation

P. I. Khadzhi ; I. V. Beloussov ; N. N. Rosanov ; S. V. Fedorov ; D. A. Markov, et al.
"Amplification and lasing at M-band of luminescence", Proc. SPIE 7994, LAT 2010: International Conference on Lasers, Applications, and Technologies, 799404 (February 07, 2011); doi:10.1117/12.881507; http://dx.doi.org/10.1117/12.881507


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